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IGBT单管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

 Type Package
Active
automotive
industrial
SiC
silicon
0~8
20~45
8~20
FST2.0
FST3.0
TO-220F
TO-247
TO-247plus
TO-247plus-4L
TO-247内绝缘
TO-252
TO-263
TO-263FC
TO-3P
CGB20N65F3TA
Active
 industrial
 silicon
 650
 20
 40
 1.5
 8~20
 0.54
 0.29
 5(Vge=17V)
 FST3.0
 TO-263
CGWT40N120F2KAE
Active
 industrial
 silicon
 1200
 40
 80
 1.7
 20~45
 3
 1.4
 5
 FST2.0
 TO-247
CGB30N65F2SAQ
Active
 industrial
 silicon
 650
 30
 60
 1.62
 8~20
 0.51
 0.4
 5
 FST2.0
 TO-263
CGB80N65F2SAN
Active
 industrial
 -
 650
 80
 100
 1.55
 8~20
 1.97
 1.19
 3
 FST2.0
 TO-263FC
CGPT40N65F2KAD
Active
 industrial
 silicon
 650
 40
 80
 1.7
 20~45
 1.23
 0.34
 5
 FST2.0
 TO-3P
CGR100N120F2KAD
Active
 industrial
 silicon
 1200
 100
 160
 1.55
 20~45
 8.14
 4.75
 5
 FST2.0
 TO-247plus
CGR140N120F3KAD
Active
 industrial
 silicon
 1200
 140
 170
 1.65
 20~45
 13
 5.8
 3
 FST3.0
 TO-247plus
CGR75N120F2KAD
Active
 industrial
 silicon
 1200
 75
 120
 1.65
 20~45
 6
 2.6
 5
 FST2.0
 TO-247plus
CGU06N65F2SAA
Active
 industrial
 silicon
 650
 6
 12
 1.8
 8~20
 0.052
 0.062
 5
 FST2.0
 TO-252
CGWT30N65F2KAD
Active
 industrial
 silicon
 650
 30
 60
 1.62
 20~45
 0.78
 0.41
 7
 FST2.0
 TO-247