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IGBT单管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

Type Package
Active
automotive
industrial
SiC
silicon
0~8
20~45
8~20
FST2.0
FST3.0
TO-220F
TO-247
TO-247plus
TO-247plus-4L
TO-247内绝缘
TO-252
TO-263
TO-263FC
TO-3P
CGWT75N65F3EAD

Active
industrial
silicon
650
75
90
1.63
8~20
2.24
1.16
-
FST3.0
TO-247
CGFW40N65F2KBT

Active
industrial
silicon
650
25
50
1.62
20~45
0.79
0.5
-
FST2.0
TO-247内绝缘
CGPF30N65F2SAQ

Active
industrial
silicon
650
11.2
28
1.62
8~20
0.51
0.4
5
FST2.0
TO-220F
AD-CGWT80N65F2SAD

Active
automotive
silicon
650
80
100
1.55
8~20
1.97
1.19
3
FST2.0
TO-247
AD-CGR75N120F2KAD

Active
automotive
silicon
1200
75
120
1.65
20~45
6
2.6
5
FST2.0
TO-247plus
CGWT40N120F2LADM

Active
automotive
silicon
1200
40
80
1.5
0~8
2.8
1.9
-
FST2.0
TO-247
CGWT40N120F2KADM

Active
automotive
silicon
1200
40
80
1.65
20~45
2.5
1.4
5
FST2.0
TO-247
AD-CGWT40N65F2KAD

Active
automotive
silicon
650
40
80
1.7
20~45
1.23
0.34
5
FST2.0
TO-247
AD-CGWT40N65F2KA

Active
automotive
silicon
650
40
80
1.7
20~45
1.14
0.49
5
FST2.0
TO-247
CGRQ160N65F3SAD

Active
industrial
silicon
650
160
240
1.45
8~20
3.7
5.1
-
FST3.0
TO-247plus-4L