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IGBT单管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

Type Package
Active
automotive
industrial
SiC
silicon
0~8
20~45
8~20
FST2.0
FST3.0
TO-220F
TO-247
TO-247plus
TO-247plus-4L
TO-247内绝缘
TO-252
TO-263
TO-263FC
TO-3P
CGR160N65F3EAD

Active
industrial
silicon
650
160
240
1.5
8~20
6.5
6.5
4
FST3.0
TO-247plus
CGRQ140N120F3KAP

Active
industrial
silicon
1200
140
170
1.65
20~45
-
-
-
FST3.0
TO-247plus-4L
CGRQ140N120F3KAD

Active
industrial
silicon
1200
140
170
1.65
20~45
8.8
5.7
-
FST3.0
TO-247plus-4L
CGR140N120F3KAP

Active
industrial
silicon
1200
140
170
1.58
20~45
12.4
6.3
-
FST3.0
TO-247plus
CGWT120N65F3EA

Active
industrial
silicon
650
120
150
1.55
8~20
3.6
2.8
-
FST3.0
TO-247
CGWT80N65F2SANM

Active
automotive
silicon
650
80
100
1.55
8~20
1.97
1.19
3
FST2.0
TO-247
CGWT80N65F2SA1D

Active
industrial
silicon
650
80
100
1.55
8~20
2.5
1.19
3
FST2.0
TO-247
CGWT40N120F2LAQM

Active
automotive
silicon
1200
40
80
1.5
0~8
1.68
1.68
-
FST2.0
TO-247
CGWT40N65F2KBT

Active
industrial
silicon
650
40
80
1.62
20~45
0.79
0.5
-
FST2.0
TO-247
CGPT40N65F2KBT

Active
industrial
silicon
650
40
80
1.62
20~45
0.79
0.5
-
FST2.0
TO-3P